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离子注入Inp晶格损伤模型的研究
引用本文:张通和. 离子注入Inp晶格损伤模型的研究[J]. 北京师范大学学报(自然科学版), 1989, 9(3): 26-32
作者姓名:张通和
作者单位:北京师范大学低能核物理研究所
摘    要:

关 键 词:离子注入 晶格 损伤

A STUDY OF LATTICE DAMAGE MODEL OF ION IMPLANTATION IN InP
Zhang Tonghe. A STUDY OF LATTICE DAMAGE MODEL OF ION IMPLANTATION IN InP[J]. Journal of Beijing Normal University(Natural Science), 1989, 9(3): 26-32
Authors:Zhang Tonghe
Affiliation:Institute of Low Energy Nuclear Physics
Abstract:Lattice damage of Bi~+ and N~+ implanted into InP is measured by RBS and channelling techniqure.And the collision cross-section of the ions in InP are calculated.The collision cross-section are related to ions species and flux. The relation of dechannelling minimum x_m of channelling backscattering spectrometry to lattice damage ratio is given using collision theory.The lat- tice damage processes are analysed using the data.Finally,the lattice dama- age model of binary compound InP is discussed.
Keywords:lattice damage model   ion implantation in InP   RBS and channelling techniqure   collision cross-section   dechannelling minimum x_m
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