| SiGe/Si异质pn结的反向C-V特性研究 |
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| 引用本文： | 苏力,覃泽. SiGe/Si异质pn结的反向C-V特性研究[J]. 广西民族大学学报, 2004, 10(4): 72-74 |
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| 作者姓名： | 苏力 覃泽 |
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| 作者单位： | 南宁地区教育学院物理系，南宁地区教育学院物理系 广西南宁 530001，广西南宁 530001 |
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| 摘 要： | 对SiGe/Si异质pn结的反向C-V特性从理论和实验上进行了研究,建立了SiGe/Si异质pn结的反向C-V特性灰色系统GM(1,1)模型,模型与实验数据符合良好,精确度较高.
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| 关 键 词： | SiGe/Si C-V特性 异质pn结 GM(1 1)模型 |
| 文章编号： | 1007-0311(2004)04-0072-03 |
| 修稿时间： | 2004-09-10 |
C-V characteristic of Study on SiGe/Si pn heterojunction |
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| SU Li,QIN Ze. C-V characteristic of Study on SiGe/Si pn heterojunction[J]. Journal of Guangxi University For Nationalities, 2004, 10(4): 72-74 |
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| Authors: | SU Li QIN Ze |
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| Abstract: | The GM(1,1) model of the inverted C-V characteristic of SiGe/Si pn heterojunction was proposed and studied theoretically and experimentally. Comparing the calculated data from this model with the experimental data, It shows that the calculated data are in good agreement with the experimental data. |
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| Keywords: | SiGe/Si C-V characteristic pn heterojunction GM(1 1)model |
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