| Bi2Se3纳米片生长及晶体管制备 |
| |
| 引用本文： | 陈 磊,王雨濛,俞金玲.Bi2Se3纳米片生长及晶体管制备[J].福州大学学报(自然科学版),2020,48(5):591-595. |
| |
| 作者姓名： | 陈 磊 王雨濛 俞金玲 |
| |
| 作者单位： | 福州大学物理与信息工程学院 福建 福州 350116,福州大学物理与信息工程学院 福建 福州 350116,福州大学物理与信息工程学院 福建 福州 350116 |
| |
| 基金项目： | 国家自然科学(61674038)；福建省对外合作项目(2019I0005) |
| |
| 摘 要： | 本文通过化学气相沉积的方法,成功地在云母衬底上制备了高质量的Bi2Se3纳米片。通过湿法转移的技术,将纳米片转移到SiO2衬底上。通过光刻技术,我们制备了基于单个Bi2Se3纳米片的晶体管,并通过施加底栅电压,对Bi2Se3纳米片晶体管进行了有效的调控。研究表明,当Bi2Se3纳米片与电极之间形成欧姆接触时,底栅的调控效果较好；而当Bi2Se3纳米片与电极之间形成肖特基接触时,底栅的调控效果较差。
|
| 关 键 词： | Bi[sub_s]2[sub_e]Se[sub_s]3[sub_e]纳米片 拓扑绝缘体 晶体管 |
| 收稿时间： | 2019/11/29 0:00:00 |
| 修稿时间： | 2020/1/7 0:00:00 |
Growth of Bi2Se3 nanosplates and the transistors fabrication |
| |
| CHEN Lei,WANG Yumeng,YU Jinling.Growth of Bi2Se3 nanosplates and the transistors fabrication[J].Journal of Fuzhou University(Natural Science Edition),2020,48(5):591-595. |
| |
| Authors: | CHEN Lei WANG Yumeng YU Jinling |
| |
| Institution: | College of Physics and Information Engineering,Fuzhou University,Fuzhou,College of Physics and Information Engineering,Fuzhou University,Fuzhou,College of Physics and Information Engineering,Fuzhou University,Fuzhou |
| |
| Abstract: | In this paper, we successfully prepared high quality Bi2Se3 nanoplates on mica substrates by chemical vapor deposition. The nanoplates were transferred to a SiO2 substrate by the wet transfer technique. Through photolithography, we prepared a transistor based on a single Bi2Se3 nanoplate and effectively tuned the Bi2Se3 nanochip transistor by applying a bottom gate voltage. Our study has shown that, the bottom gate tunning effect is better when the Ohmic contact is formed between the Bi2Se3 nanoplate and the electrodes, while the bottom gate tunning effect is poor when a Schottky contact is formed. |
| |
| Keywords: | Bi2Se3 nanoplate topological insulator transistor |
|
| 点击此处可从《福州大学学报(自然科学版)》浏览原始摘要信息 |
| 点击此处可从《福州大学学报(自然科学版)》下载免费的PDF全文 |
|
