| 用量子力学方法计算半导体硅中某些深能级 |
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| 引用本文： | 马稚尧,欧海燕,李元芳,史济群.用量子力学方法计算半导体硅中某些深能级[J].华中科技大学学报(自然科学版),1997(2). |
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| 作者姓名： | 马稚尧 欧海燕 李元芳 史济群 |
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| 作者单位： | Ma Zhiyao Assoc. Prof.; Dept. of Solid State Electronics，HUST，Wuhan 430074，China. Ou Haiyan Li Yuanfang Shi Jiqun |
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| 摘 要： | 采用了复合体模型，对常温下硅中金引入的深能级进行了理论上的计算，给出了相应的哈密顿算符，利用区域变分法计算，计算结果与实验测量数据符合较好
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| 关 键 词： | 半导体深能级 复合体 杂质 区域变分法 |
Calculation of Some Deep Levels in Semiconductors with the Quantum Mechanical Method |
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| Ma Zhiyao Assoc. Prof., Dept. of Solid State Electronics,HUST,Wuhan ,China. Ou Haiyan Li Yuanfang Shi Jiqun.Calculation of Some Deep Levels in Semiconductors with the Quantum Mechanical Method[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,1997(2). |
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| Authors: | Ma Zhiyao Assoc Prof Dept of Solid State Electronics HUST Wuhan China Ou Haiyan Li Yuanfang Shi Jiqun |
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| Institution: | Ma Zhiyao Assoc. Prof., Dept. of Solid State Electronics,HUST,Wuhan 430074,China. Ou Haiyan Li Yuanfang Shi Jiqun |
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| Abstract: | A model for a complex with deep level impurities and defects is developed. The Hamiltonian operator of the system is written and with the zone variational method the position of the deep level is located. With this quantum mechanical method, the deep donor and acceptor levels of gold in silicon at room temperature have been calculated. Calculation results agree well with experimental data. It is believed that the method could also be applied to the calculation of the deep levels in silicon with other impurities and defects or some deep levels in other semiconductor materials. It could be helpful to the understanding of the formation mechanism of deep levels in semiconductors. |
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| Keywords: | deep level in semiconductor complex impurities zone variational method |
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