Novel high PSRR current reference based on subthreshold MOSFETs

This paper takes full advantages of the I–V transconductance characteristics of metal-oxide semiconductor field effect transistor (MOSFET) operating in the subthreshold region and the enhancement pre-regulator technique with the high gain negative feedback loop. The proposed reference circuit, designed with the SMIC 0.18 μm standard complementary metal-oxide semiconductor (CMOS) logic process technology, exhibits a stable current of about 1.701 μA with much low temperature coefficient (TC) of 2.5×10⁻⁴ μA /°C in the temperature range of −40 to 150 °C at 1.5 V supply voltage, and also achieves a best PSRR over a broad frequency. The PSRR is about − 126 dB at DC frequency and remains −92 dB at the frequency higher 100 MHz. Moreover the proposed reference circuit operates stably at the supply voltage higher 1.2 V and has good process compatibility. Biography: YU Guoyi (1973– ), male, Lecturer, Post Doctor, research direction: low-voltage high precision mixed-signal integrated circuits design and RFICs.