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黄铜矿结构CuInS2陶瓷和薄膜的制备及性能研究
引用本文:尚勋忠,方金钢,王志强,黎明锴,周桃生,何云斌.黄铜矿结构CuInS2陶瓷和薄膜的制备及性能研究[J].湖北大学学报(自然科学版),2013(1):89-92.
作者姓名:尚勋忠  方金钢  王志强  黎明锴  周桃生  何云斌
作者单位:功能材料绿色制备与应用教育部重点实验室(湖北大学);湖北大学材料科学与工程学院
基金项目:国家自然科学基金(50972041,61274010,11175062);教育部新世纪优秀人才计划(NCET-09-0135);湖北省自然科学基金(2008CDB249);武汉市学科带头人计划(200951830550)资助
摘    要:采用固相烧结法,在真空管式炉中于960℃下保温2h,制备得到具有纯黄铜矿结构均匀致密的CuInS2陶瓷,所制备的陶瓷呈现P型导电且导电性能良好.此外,以自制的CuInS2陶瓷为靶材,采用脉冲激光沉积法在c轴取向的蓝宝石单晶衬底上制备得到高质量的外延CuInS2薄膜.XRD分析表明薄膜具有良好的沿(112)方向外延取向性,透射光谱测试分析得到薄膜光学带隙为1.4eV.

关 键 词:CuInSe  陶瓷  薄膜  脉冲激光沉积

Preparation and properties of CuInS2 ceramics and films with chalcopyrite structure
SHANG Xunzhong,FANG Jin’gang,WANG Zhiqiang,LI Mingkai,ZHOU Taosheng,HE Yunbin.Preparation and properties of CuInS2 ceramics and films with chalcopyrite structure[J].Journal of Hubei University(Natural Science Edition),2013(1):89-92.
Authors:SHANG Xunzhong  FANG Jin’gang  WANG Zhiqiang  LI Mingkai  ZHOU Taosheng  HE Yunbin
Institution:1,2(1.Key Laboratory of Green Preparation and Application of Functional Materials(Hubei University),Ministry of Education, Wuhan 430062,China;2.School of Materials Science and Engineering,Hubei University,Wuhan 430062,China)
Abstract:Compact pure-chase CulnS2ceramics with chalcopyrite structure were sintered at 960 ℃ for 2 hours in vacuum by conventional solid-state sintering method. All the sintered ceramics show hole conduction with a resistivity around 9 Ωcm. Using the home-made ceramic target, high-quality CuInS2 thin films were deposited on single-crystal c-plane sapphire substrates by pulsed laser deposition. The CuInS2 film grew epitaxially on c-plane sapphire with a (112) orientation. The optical bandgap of the CuInS2 film is estimated to be 1.4 eV, which well matches to the solar spectrum.
Keywords:CulnS2  ceramic  thin film  pulsed laser deposition
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