紫外压印光刻中阻蚀胶残膜刻蚀工艺

针对紫外（UV）压印光刻在压印工艺过程中会产生阻蚀胶残膜的技术特点，采用以O2为反应气体来清除阻蚀胶残膜的反应离子刻蚀（RIE）工艺方法，研究了不同的反应气体流量、反应腔室压力、射频功率等刻蚀参数对刻蚀速率和刻蚀各向异性的影响，得到了刻蚀速率和刻蚀各向异性随各刻蚀参数的变化趋势图．实验结果表明，减小反应气体压力和气体流速可以降低刻蚀速率，提高刻蚀各向异性．通过对刻蚀参数的优化配置，当射频功率在200W、反应气体流速在30mL／min、反应腔室压力为0．6Pa时，刻蚀速率可以稳定在265nm／min，各向异性值可以达到13，因此实现了对压印图质形的高质量转移．

Etching Process for Residual Resist Layer in Ultraviolet-Imprint Lithography

A reactive ion etching(RIE) cleaning the residual resist layer away by O_2 was presented in UV-imprint lithography.The important etching parameters affecting etching rate and anisotropy,such as the flow rate of O_2,pressure in reactor,rdio feqency(RF) power were investigated,and the relationship among these parameters and the etching rate and etching anisotropy was deduced.The experimental results show that the low etching rate and anisotropy correspond to the low flow rate of the etching gas and low gas pressure.When the RF power is 200W,pressure 0.6 Pa,and the flow rate 30 mL/min,a stable etching rate(265 nm/min) and a high anisotropy(13) are obtained to perfectly transfer the patterns in UV-imprint lithography.