首页 | 本学科首页   官方微博 | 高级检索  
     检索      

铯溅射负离子源负离子发射过程的理论分析
引用本文:饶雨生,陈后鹏.铯溅射负离子源负离子发射过程的理论分析[J].西安交通大学学报,1990,24(4):109-115.
作者姓名:饶雨生  陈后鹏
作者单位:西安交通大学,西安交通大学,西安交通大学,西安交通大学,空军电讯工程学院
摘    要:本文采用改进的偶极层模型和量子理论,研究了铯溅射负离子源中负离子形成机理,给出了吸附铯原子层的金属表面功函数变化及电子转移几率公式,并用量子隧道模型导出负离子形成几率,计算了负离子产额和引出束流强.其结果与实验值基本相符.与测量值相比,比 Alton 的计算结果要好,且计算过程简单.它为溅射型负离子源机理研究提供了一种理论模式.

关 键 词:离子源  负离子  离子发射  功函数

THEORETIC ANALYSIS OF THE EMISSIVE PROCESS OF NEGATIVE IONS IN CESIUM SPUTTER NEGATIVE ION SOURCES
Rao Yusheng Chen Houpeng Xi Boling Dong Beidou.THEORETIC ANALYSIS OF THE EMISSIVE PROCESS OF NEGATIVE IONS IN CESIUM SPUTTER NEGATIVE ION SOURCES[J].Journal of Xi'an Jiaotong University,1990,24(4):109-115.
Authors:Rao Yusheng Chen Houpeng Xi Boling Dong Beidou
Institution:Rao Yusheng Chen Houpeng Xi Boling Dong Beidou (Xi'an Jiaotong University) Xia Beihua (Air Force Communication Engineering Institute)
Abstract:The mechanism of forming negative ions in Cesium sputter negative ion sources is studied by means of a modified dipole layer model and quantum theory.Formulas of the change of work function on the metal surface adsorbing Cesium layer and the electron transfer probability are given.The forming probability of the negative ions are derived using a quantum tunnel mode.The negative ion yield and extracted beam current intensity are calculated.The calculation re-sults are in good agreement with the experimental data.The calculation is simple. The philosophy described in this paper may offer a useful theoretic model for the mechanism study of Cesium sputter negative ion sources and can be applied as a theoretical model for study of sputter negative ion sources.
Keywords:ion sources  negative ion  ion emission  work function  agsorption  sputtering  
本文献已被 CNKI 维普 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号