| C掺杂ZnO稀磁半导体的磁特性研究 |
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| 引用本文： | 翁臻臻.C掺杂ZnO稀磁半导体的磁特性研究[J].福州大学学报(自然科学版),2015,43(6):778-782. |
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| 作者姓名： | 翁臻臻 |
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| 作者单位： | 福州大学物理与信息工程学院，福建 福州 350116 |
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| 基金项目： | 福建省教育厅科研资助项目 |
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| 摘 要： | 利用基于密度泛函理论(DFT)的第一性原理计算方法,研究C掺杂ZnO稀磁半导体的磁性质.发现ZnO∶C体系的磁性来源于C-p和Zn-d轨道之间的杂化,铁磁性产生的机制是以巡游电子为媒介的铁磁交换作用.富O环境下制备ZnO∶C样品能够更好地在室温下得到稳定的铁磁有序.
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| 关 键 词： | 氧化锌 稀磁半导体 第一性原理 磁特性 |
Study on the magnetic properties of C-doped ZnO |
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| WENG Zhenzhen.Study on the magnetic properties of C-doped ZnO[J].Journal of Fuzhou University(Natural Science Edition),2015,43(6):778-782. |
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| Authors: | WENG Zhenzhen |
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| Institution: | College of Physics and Information Engineering, Fuzhou University |
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| Abstract: | The magnetism of C-doped ZnO has been investigated by the first-principles calculations based on density functional theory (DFT). It is found the magnetism of C-doped ZnO is derived from the hybridization between the C-p and Zn-d orbit and the electron mediated mechanism is proposed for the ferromagnetism in the C-doped ZnO. The sample should be fabricated under O-rich condition to have a ferromagnetic ordering. |
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| Keywords: | ZnO diluted magnetic semiconductor first-principles magnetic character |
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