A Highly Linear Low-Voltage Source-Degeneration Transconductor Based on Unity-Gain Buffer |
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Authors: | KONG Yaohui LIU Airong YANG Huazhong |
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Institution: | Department of Electronic Engineering, Tsinghua University, Beijing 100084, China |
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Abstract: | A complementary metal oxide semiconductor (CMOS) transconductor based on a high performance unity-gain buffer driving the degeneration resistor was used to obtain a highly linear voltage-to-current conversion with considerable reduction of the supply voltage. Simulations show that the transconductor using an 0.18-μm standard CMOS process with a 1.2-V supply voltage has less than ?80 dB total harmonic distortion (THD) for a 1-MHz 0.4-Vp-p differential input signal. The third-order intermodulation is less than ?63 dB for 0.25 Vp-p differential inputs at 1 MHz. The DC power consumption in the transconductor core is 240 μW. This topology is a feasible solution for low voltage and low power applications. |
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Keywords: | low voltage low power high linearity transconductor unity gain buffer |
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