| 功率晶体管二次击穿无损测试研究 |
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| 引用本文： | 农亮勤,韦绍波. 功率晶体管二次击穿无损测试研究[J]. 广西民族大学学报, 1999, 5(1): 15-19 |
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| 作者姓名： | 农亮勤 韦绍波 |
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| 作者单位： | 广西民族学院物理与电子工程系 |
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| 摘 要： | 根据功率晶体管二次击穿的物理变化过程，设计出可行的二次击穿无损测试系统，并对系统各部分电路的工作原理作了介绍
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| 关 键 词： | 晶体管 二次击穿 无损测试 电子开关 分流保护 记忆电路 |
Nondestructive Test Study for Second Breakdown of Power transistor |
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| NONG Liang-qin,WEI Shao-bo. Nondestructive Test Study for Second Breakdown of Power transistor[J]. Journal of Guangxi University For Nationalities, 1999, 5(1): 15-19 |
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| Authors: | NONG Liang-qin WEI Shao-bo |
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| Abstract: | According to the course of physical change for second breakdown of power transistor, the author designes a feasible nondestructive test system for second breakdown, and introduces the working principle of respective section of the system. |
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| Keywords: | transistor second breakdown nondestructive test electronic switch divided current safeguard remembered circuit |
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