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一种硅基顶发射有机发光器件
引用本文:吴志军.一种硅基顶发射有机发光器件[J].松辽学刊,2008,29(3):60-62.
作者姓名:吴志军
作者单位:华侨大学信息学院,福建泉州362011
基金项目:国家自然科学基金,福建省自然科学基金 
摘    要:本文制作了一种硅基顶发射有机发光器件.采用紫外表面处理的金属银作为阳极;超薄的铝/银作为半透明的复合阴极;4,4′,4″-tris{N,-(3-methylphenyl)-N-phenylamin}triphenylamine(m-MTDATA)作为空穴注入层;N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine(NPB)作为空穴传输层;tris(8-hydroxyquinoline)aluminium(Alq)作为发光层.器件在3V下开启,开启亮度为3cd/m^2;在11V达到最大亮度19610cd/m^2;在6V时达到最高效率2.7cd/A.

关 键 词:硅基  顶发射  紫外处理

Top-Emitting Organic Light-Emitting Device Based on Silicon Substrate
WU Zhi-Jun.Top-Emitting Organic Light-Emitting Device Based on Silicon Substrate[J].Songliao Journal (Natural Science Edition),2008,29(3):60-62.
Authors:WU Zhi-Jun
Institution:WU Zhi-Jun (College of Information Science and Engineer, Huaqiao University, Quanzhou 362011, China)
Abstract:We have fabricated a very bright top-emitting organic light-emitting device directly based on silicon substrate utilizing the surface-modified Ag as anode. By inducing a thin silver oxide at the surface of Ag, the hole injection from Ag anode into organic light-emitting device is largely enhanced yet with rather high reflectivity retained. The brightness of the top-emitting device on silicon substrate using such surface-modified Ag anode reaches 19 610 cd/m^2 at 11 V, and the highest current efficiency reaches 2.7 cd/A at 6 V.
Keywords:top-emitting  silicon substrate  UV-surface modified
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