| 碲和镁掺杂的新型GaAs隧道结的MBE生长与器件特性 |
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| 引用本文： | 甘兴源,郑新和,吴渊渊,王海啸,王乃明.碲和镁掺杂的新型GaAs隧道结的MBE生长与器件特性[J].中国科学:物理学 力学 天文学,2014(5):472-478. |
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| 作者姓名： | 甘兴源 郑新和 吴渊渊 王海啸 王乃明 |
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| 作者单位： | [1]中国科学院苏州纳米技术与纳米仿生研究所,纳米器件与应用重点实验室,苏州215123 [2]中国科学院大学,北京100190 |
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| 基金项目： | 国家自然科学基金（批准号：61274134）和苏州市国际合作项目（编号：SH201215）资助项目 |
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| 摘 要： | 本文采用分子束外延(MBE)的生长方法,研究了单质碲(Te)和单质镁(Mg)分别作为n型和p型掺杂剂时在III-V族半导体GaAs中的掺杂行为,并且实现了以Te和Mg为掺杂剂的新型GaAs隧道结的生长.通过对生长温度、As4与Ga束流强度V/III比和掺杂剂束流强度的优化调节,获得了载流子迁移率较高且晶体质量良好的重掺杂的GaAs样品;在此基础上生长的新型n-GaAs(Te)/p-GaAs(Mg)隧道结的峰值电流密度高达21 A/cm2.
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| 关 键 词： | 单质碲 单质镁 砷化镓 分子束外延 隧道结 |
Novel GaAs tunnel junction using tellurium and magnesium doping by solid-state molecular beam epitaxy |
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| GAN XingYuan,ZHENG XinHe,WU YuanYuan,WANG HaiXiao＆ WANG NaiMing.Novel GaAs tunnel junction using tellurium and magnesium doping by solid-state molecular beam epitaxy[J].Scientia Sinica Pysica,Mechanica & Astronomica,2014(5):472-478. |
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| Authors: | GAN XingYuan ZHENG XinHe WU YuanYuan WANG HaiXiao＆ WANG NaiMing |
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| Institution: | ( Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China 2 University of Chinese Academy of Sciences, Beijing 100190, China) |
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| Abstract: | Through all solid-state molecular beam epitaxy, the doping behavior of n-type dopant Te and p-type dopant Mg m GaAs were investigated. Heavy doping GaAs samples with good crystal quality and high carrier mobility were obtained. By using low temperature growth technique with a high temperature in-situ heat treatment process, the surface morphology of doped GaAs samples is significantly improved. The fabricated n-GaAs（Te）/p-GaAs（Mg） tunnel junction shows a peak current density of 21 A/cm^2 which could open up the way to realize high-concentrator multiple junctions solar cells using MBE technique. |
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| Keywords: | Te Mg GaAs molecular beam epitaxy tunnel junction |
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