磁性隧道结电阻与电流驱动相关性分析

利用离子束高真空复合溅射装置置备具有Ta缓冲层和Ta/Te/Ta覆盖表面层的Fe/Al2O3/FeCo的磁性隧道结，在零磁场下观测隧道结电导和结电阻面积积（RA）与垂直射入隧道结平面的自旋极化发射电流的依赖关系，研究关系，研究发现，磁性隧道结的电导和RA的发射电流驱动效应取决于隧道结的物相成分，微结构和电流强度，在大驱动电流范围观测电到导特性不同的4个区域。

Current-Driven Dependence of Junction Resistance-Area Product of Magnetic Tunnel Junction

A series of Fe/Al2O3/FeCo magnetic tunnel junction(MTJ) with a Ta buffer layer and a Ta/Fe/Tacapping layer were fabricated using ion-beam sputtering technique. We examine the process that the spin-polar-ized electrons current which follow perpendicular to the layers and scatter from the ferromagnetic layers cause thechanges of the conduction and the junction resistance-area of the MTJ in the absence of applied magnetic field.The experiments show that the current-driven effect of a MTJ in the zero magnetic field depends on the injecting-current intensities into the magnetic tunnel junction. We propose that the observed changes of junction resistance-area are due to excitations of injection current with a very wide range from 0 μA to 10 000 μA.