| 双极型晶体管发射区有效杂质分布的温度关系 |
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| 引用本文： | 郑茳,王燕.双极型晶体管发射区有效杂质分布的温度关系[J].应用科学学报,1993,11(3):248-252. |
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| 作者姓名： | 郑茳 王燕 |
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| 作者单位： | 东南大学
(郑茳，王燕，黄勤，吴金)，东南大学(魏同立) |
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| 基金项目： | 国家自然科学基金资助项目 |
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| 摘 要： | 从理论上研究了双极型晶体管发射区中有效杂质分布N_(Eeff)在不同温度下与发射区浓度N_E的关系,结果表明:常温和高温时,N_(Eeff)随N_E的增大而上升;在低温下,N_(Eeff)则随N_E的增大而下降,而在某一特殊温度时N_(Eeff)将与N_E无关,这将为双极晶体管提供设计依据.
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| 关 键 词： | 温度 有效杂质分布 晶体管 |
TEMPERATURE DEPENDENCE OF THE EFFECTIVE DOPING DISTRIBUTION IN THE EMITTER OF BIPOLAR TRANSISTORS |
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| ZHENG JIANG WANG YAN HUANG QIN WU JIN WEI TONGLI.TEMPERATURE DEPENDENCE OF THE EFFECTIVE DOPING DISTRIBUTION IN THE EMITTER OF BIPOLAR TRANSISTORS[J].Journal of Applied Sciences,1993,11(3):248-252. |
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| Authors: | ZHENG JIANG WANG YAN HUANG QIN WU JIN WEI TONGLI |
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| Institution: | Southeast University |
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| Abstract: | In this paper, the relation between the effective doping distribution N Eeff and the doping concentration NE in the emitter of silicon bipolar transistors at different temperatures is studied theoretically. The results indicate that NEeff increases as NE rises at room and high temperatures; however, NEeff will decrease as NE rises at low temperatures; and NEeff shows no relation to NB at a particular temperature. These results will provide the design foundation of bipolar transistors for low temperature operation. |
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| Keywords: | temperature effective doping distribution transistor |
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