| 采用热丝化学气相沉积法制备SiCN薄膜的研究 |
| |
| 引用本文： | 赵武,屈亚东,张志勇,贠江妮,樊玎玎. 采用热丝化学气相沉积法制备SiCN薄膜的研究[J]. 中南大学学报(自然科学版), 2010, 41(1) |
| |
| 作者姓名： | 赵武 屈亚东 张志勇 贠江妮 樊玎玎 |
| |
| 作者单位： | 西北大学,信息科学与技术学院,陕西,西安,710127 |
| |
| 基金项目： | 陕西省自然科学基金资助项目，陕西省教育厅专项科研计划项目，西北大学研究生创新基金资助项目 |
| |
| 摘 要： | 采用热丝化学气相沉积(HFCVD)系统,在单晶Si衬底上制备SiCN薄膜。所采用的源气体为高纯的SiH4,CH4和N2。用原子力显微镜(AFM)、X线衍射谱(XRD)和X线光电子能谱(XPS)对样品进行表征与分析。研究结果表明:SiCN薄膜表面由许多粒径不均匀、聚集紧密的SiCN颗粒组成;薄膜虽然已经晶化,但晶化并不充分,存在着微晶和非晶成分,通过Jade软件拟合计算出薄膜的结晶度为48.72%;SiCN薄膜不是SiC和Si3N4的简单混合,薄膜中Si,C和N这3种元素之间存在多种结合态,主要的化学结合状态为Si—N,Si—N—C,C—N,N=C和N—Si—C键,但是,没有观察到Si—C键,说明所制备的薄膜形成了复杂的网络结构。
|
| 关 键 词： | SiCN薄膜 热丝化学气相沉积法(HFCVD) 原子力显微镜(AFM) X线衍射谱(XRD) X线光电子能谱(XPS) |
Silicon carbon nitride thin film produced by hot-filament chemical vapor deposition |
| |
| ZHAO Wu,QU Ya-dong,ZHANG Zhi-yong,YUN Jiang-ni,FAN Ding-ding. Silicon carbon nitride thin film produced by hot-filament chemical vapor deposition[J]. Journal of Central South University:Science and Technology, 2010, 41(1) |
| |
| Authors: | ZHAO Wu QU Ya-dong ZHANG Zhi-yong YUN Jiang-ni FAN Ding-ding |
| |
| Abstract: | The silicon carbon nitride (SiCN) thin film was synthesized on Si substrate by hot-filament chemical vapor deposition (HFCVD) with the source gas of SiH4, CH4 and N2.The sample was characterized by atomic force microscope (AFM), X-ray diffraction spectroscopy (XRD) and X-ray photo-emission spectroscopy (XPS). The results show that the surface of the SiCN thin film is composed of a lot of grains which have different sizes and accumulate close. The thin film is crystallized, but crystallization is not complet... |
| |
| Keywords: | SiCN thin film hot-filament chemical vapor deposition atomic force microscope X-ray diffraction spectroscopy X-ray photo-emission spectroscopy |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
|
