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双抛量子阱中类氢杂质的结合能
引用本文:郝剑红,闫发旺.双抛量子阱中类氢杂质的结合能[J].河北师范大学学报(自然科学版),1999,23(2):209-214.
作者姓名:郝剑红  闫发旺
作者单位:[1]石家庄师范专科学校物理系 [2]河北师范大学物理系
摘    要:以GaAs/Ga1-xAlxAs为例,在有效质量的近似下,讨论了双抛量了阱吕类氢杂质的结合能,结果表明:(1)双方量子阱中类氢杂质的结合能是双抛阱中杂质结合能的1.3倍;(2)无论杂质在阱中还是垒中,不仅垒宽和阱宽影响其结合能,而且Al的掺杂度x也是影响结合能的一个重要因素。

关 键 词:类氢杂质  结合能  量子阱  双抛量子阱  半导体

Binding Energy of a Hydrogenic Impurity in Double Parabolic Quantum Wells
HAO Jian hong ,YAN Fa wang ,LI You cheng.Binding Energy of a Hydrogenic Impurity in Double Parabolic Quantum Wells[J].Journal of Hebei Normal University,1999,23(2):209-214.
Authors:HAO Jian hong  YAN Fa wang  LI You cheng
Institution:HAO Jian hong 1,YAN Fa wang 2,LI You cheng 2
Abstract:Considering the effective mass appoximation and taking the GaAs/Ga 1 x Al x As for example,we investigate the binding energy of a hydrogenic impurity in the double parabolic quantum well(DPQW).The results show that: (1)The binding energy of a hydrogenic impurity in the double square quantum well (DSQW) is about 1.3 times larger than in DPQW;(2)No matter where the shallow donor is, the barrier thickness( L b),the well width ( L W) and the donor composition( x )all affect the binding energy( E b)greatly.
Keywords:hydrogentic impurity  binding energy  double square quantum well (DSQW)  double parabolic quantum well (DPQW)
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