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原位合成增强体TiB层错的透射电镜分析
引用本文:吕维洁,覃业霞,张荻,张小农,吴人洁.原位合成增强体TiB层错的透射电镜分析[J].上海交通大学学报,2003,37(2):245-247.
作者姓名:吕维洁  覃业霞  张荻  张小农  吴人洁
作者单位:上海交通大学,金属基复合材料国家重点实验室,上海,200030
基金项目:国家自然科学基金重点资助项目 ( 596 31 0 80 ),国防军工“十五”重点课题以及航空支撑基金课题
摘    要:利用透射电镜和高分辨率透射电镜研究了原位合成钛基复合材料增强体TiB的堆垛层错结构。结果表明,堆垛层错容易在TiB的(100)面上形成,平行于TiB的生长方向010],并贯穿整个增强体。堆垛层错在TiB形核与长大的过程中形成,并且与增强体TiB的B27晶体结构有关。由于TiB的B27结构,在(100)面上容易形成B原子的不足而导致原子错排,并且在(100)面上形成堆垛层错有利于减少增强体与基体合金间的晶格畸变。

关 键 词:原位合成  钛基复合材料  TiB  堆垛层错
文章编号:1006-2467(2003)02-0245-03

TEM Research on Stacking Faults of In situ Synthesized Reinforcement TiB
L Wei jie,QIN Ye xia,ZHANG Di,ZHANG Xiao nong,WU Ren jie.TEM Research on Stacking Faults of In situ Synthesized Reinforcement TiB[J].Journal of Shanghai Jiaotong University,2003,37(2):245-247.
Authors:L Wei jie  QIN Ye xia  ZHANG Di  ZHANG Xiao nong  WU Ren jie
Abstract:Stacking faults of in situ synthesized reinforcement TiB in titanium matrix composites were observed by transmission electron microscope (TEM) and high resolution transmission electron microscope (HREM). Stacking faults are likely to form ont the (100) plane and are parallel to the growth direction 010] of TiB. Moreover, the stacking faults penetrate the reinforcement. The stacking faults form during the nucleation and growth of TiB and are related to B27 structure of TiB. Due to B27 structure, the scarcity of boron atoms is likely to form on the (100) plane which would results in the stacking disfigurement on the (100) plane. Moreover, the formation of stacking faults on the (100) plane serves to minimize the lattice strain between the TiB and the titanium matrix alloy.
Keywords:in situ  synthesized  titanium matrix composites  TiB  stacking fault
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