| GaAs红外发光管芯片的表面性质 |
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| 引用本文： | 林秀华.GaAs红外发光管芯片的表面性质[J].厦门大学学报(自然科学版),1999,38(5):682-686. |
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| 作者姓名： | 林秀华 |
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| 作者单位： | 厦门大学物理学系,固体表面物理化学国家重点实验室,厦门,361005 |
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| 摘 要： | 利用扫描电子显微镜观察 Ｇａ Ａｓ 外延层及 Ｉ Ｒ Ｌ Ｅ Ｄ 芯片的表面，测量了输出辐射强度随芯片表面不同形貌的变化，讨论了 Ｇａ Ａｓ 红外发光二极管外延及芯片工艺对器件光学、电学性质的影响． 结果显示，芯片表面玷污、划伤，电极磨损，使输出辐射强度降低．
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| 关 键 词： | GaAs红外发光二极管 芯片 表面性质 |
Surface Properties of GaAs IR-LED Chips |
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| Lin Xiuhua.Surface Properties of GaAs IR-LED Chips[J].Journal of Xiamen University(Natural Science),1999,38(5):682-686. |
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| Authors: | Lin Xiuhua |
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| Abstract: | The surfaces of GaAs compound epitaxy layers and IR LED chips are observed by scanning electron microscopy.The changes of radiant power intensity with the various surfaces morphology are measured.The effects of the epitaxial growth and chips fabricated technologies on the opto electrical characteristics are discussed.The results show that the output radiant intensities of electrode wear,chips surface contaminate and scratch are decreased. |
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| Keywords: | GaAs IR LED Chips Surface properties |
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