Photoluminescence from Si-based SiNxOy films |
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| Authors: | Liangsheng Liao Xiaobing Liu Zuhong Xiong Shuai Yuan Xiaoyuan Hou |
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| Institution: | (1) State Key Laboratory of Surface Physics and T. D. Lee Physics Laboratory, Fudan University, 200433 Shanghai, China;(2) Physics Department, Changsha Electric Power University, 410077 Changsha, Hunan, China |
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| Abstract: | B+, C+, Si+, and As+ with dose of 5 × 1016 cm−2 were implanted into SiNxOy, films grown on crystalline silicon by plasma-enhanced chemical vapor deposition. The ion-implanted samples exhibit their
photoluminescence with different intensities and different peak wavelengths after thermal annealing. Especially, the C+-implanted SiNxOy, films show very intense photoluminescence at green-yellow color region. |
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| Keywords: | silicon-based light-emitting materials photoluminescence ion implantation |
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