DC磁控溅射沉积FexN薄膜成分及生长机制

使用直流磁控溅射方法,Ar/N2作为放电气体,在玻璃衬底上沉积FexN薄膜.利用X射线光电子能谱(XPS)、掠入射小角X射线散射(GISAXS)、X射线衍射(XRD)、掠入射非对称X射线衍射(GIAXD)和原子力显微镜(AFM)研究薄膜的成分和生长机制.实验结果表明,在5%N2流量下获得FeN0.056单相化合物,薄膜中氮原子含量为14%,该值与α"-Fe16N2相中的氮原子的化学计量(11%)接近;GISAXS和AFM对薄膜表面分析表明,随溅射时间增加,薄膜变得愈加不光滑,用动力学标度的方法定量分析结果为:薄膜表面呈现自仿射性质,静态标度指数α≈0.65,生长指数β≈0.53±0.02,动力学标度指数z≈1.2,薄膜生长符合Kolmogorov提出的能量波动概念的KPZ模型指数规律.

The Composition and Growth Mechanism of Iron Nitride Thin Films Deposited by DC Magnetron Sputtering

Iron nitride films were deposited on glass substrate by DC magnetron sputtering with mixed Ar／N2 as discharge (N2 fraction of 5％) and at different time ( 30 min , 20 min , 10 min , and 5 min , respectively ) . The composition of the films was analyzed by means of X-ray photoelectron spectroscopy experiment (XPS) . The layer phases and the surface morphologies of the films were characterized with the aid of grazing incidence X-ray scattering and X-ray diffraction as well as atomic force microscopy . For the film grown at N2 fraction of 5 ％ , the phase of FeN_0.056appeared . The surface of the films showed the selfaffine character . The values of roughness exponent α≈ 0.65 and growth exponent β≈ 0.53 are in agreement with the improvised KPZ exponents based on Kolmogorov's energy cascade concept .