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Approaches for improving the performance of filament-type resistive switching memory
Authors:LIAN WenTai  LONG ShiBing  LU HangBing  LIU Qi  LI YingTao  ZHANG Sen  WANG Yan  HUO ZongLiang  DAI YueHua  CHEN JunNing  LIU Ming
Affiliation:[1]Laboratory of Nano-Fabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China [2]College of Electronics and Technology, Anhui University, Hefei 230039, China
Abstract:
Keywords:non-volatile memory   resistive random access memory (RRAM)   conductive filament (CF)
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