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| p型ZnO:Mn-N薄膜的制备及特性研究 | |
| 引用本文： | 阮海波,孔春阳,秦国平,南貌 .p型ZnO:Mn-N薄膜的制备及特性研究[J].重庆师范大学学报(自然科学版),2009,26(3):82-085. |
| 作者姓名： | 阮海波" target="_blank"> 阮海波 孔春阳 秦国平 南貌 |
| 作者单位： | 重庆师范大学,物理学与信息技术学院,光学工程重点实验室,重庆,400047 |
| 摘 要： | 用射频磁控溅射法在石英玻璃衬底上制备了较高结晶质量的ZnO: Mn薄膜,继而进行N离子注入和退火处理,成功实现了ZnO薄膜的Mn-N两步法共掺杂和p型转变.利用X射线衍射(XRD)、Hall测试、分光光度计、X射线光电子能谱(XPS)等测试手段对其性能进行了分析.结果表明:所测样品均具有单一的c轴择优取向,薄膜在退火后没有检测到其它杂质相的生成;薄膜在650 ℃经10～30 min退火时均可实现p型转变,空穴浓度可达1016～1017cm-3,表明650℃可能为ZnO: Mn-N体系中N离子达到电激活成为有效受主的温度;XPS能谱证明了Mn2+、N3-离子的掺入;在热退火作用下,部分间隙位N离子达到电激活通过扩散进入O空位,形成N-Zn或N-Mn键,是样品转变为p型的依据; p型ZnO: Mn-N薄膜室温下的禁带宽度为3.16 eV,相对未掺杂ZnO的禁带宽度3.29 eV明显减小. |
| 关 键 词： | 射频测控溅射 离子注入 Mn-N共掺 退火 电激活 p型ZnO |
Fabrication and Characteristics Research into Mn-N Codoped p-Type ZnO Films |
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RUAN Hai-ho,KONG Chun-yang,QIN Guo-ping,NAN Mao .Fabrication and Characteristics Research into Mn-N Codoped p-Type ZnO Films [J].Journal of Chongqing Normal University:Natural Science Edition,2009,26(3):82-085. |
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| Authors: | RUAN Hai-ho" target="_blank"> RUAN Hai-ho KONG Chun-yang QIN Guo-ping NAN Mao |
| Institution: | RUAN Hai-bo,KONG Chun-yang,QIN Guo-ping,NAN Mao(Optical Engineering Key Lab,College of Physics , Information Technology,Chongqing Normal University,Chongqing 400047,China) |
| Abstract: | p-Type conductive Mn-N codoped ZnO thin films have been fabricated on quartz glass substrates by radio-frequency magnetron sputtering technique together with the direct implantation of N ions and post-annealing at appropriate condition.The effects of thermal annealing on the structure and electrical properties of the codoped ZnO films are investigated by X-ray diffraction,Hall measurements system,transmission spectrum and X-ray photoelectron spectroscopy.The experimental results suggest that all the films h... |
| Keywords: | radio frequency magnetron sputtering Mn-N codoped ion-implant anneal electrical activation p-type ZnO films |
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