| Hg2I2声光器件换能器带宽及镀层厚度的确定 |
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| 引用本文： | 谢本亮,饶敏如.Hg2I2声光器件换能器带宽及镀层厚度的确定[J].上海交通大学学报,2003,37(12):1979-1982. |
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| 作者姓名： | 谢本亮 饶敏如 |
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| 作者单位： | 1. 赣南师范学院,科研处,赣州,341000
2. 赣南师范学院,物理系 |
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| 摘 要： | 采用环氧树脂聚合物作为换能器与Hg2I2声光介质的缓冲层(粘接层),设计了Hg2I2声光器件的换能器.根据换能器等效电路网络分析法,就x切LN/Hg2I2声光器件的电极层各种金属材料和厚度计算了换能器损耗TL随归一化频率f/f0的变化关系.从声光器件的布喇格带宽和工艺条件出发,优化选择了换能器损耗为3dB范围内的换能器结构、电极层材料及其厚度和压电层厚度,并确保了换能器的倍频程带宽.
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| 关 键 词： | 声光器件 换能器 结构 带宽 镀层厚度 |
| 文章编号： | 1006-2467(2003)12-1979-04 |
| 修稿时间： | 2002年12月20 |
Transducer of Hg2I2 Acousto-Optic Devices and the Determination of the Bandwidth and Layers' Thickness |
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| XIE Ben-liang,RAO Min-ru.Transducer of Hg2I2 Acousto-Optic Devices and the Determination of the Bandwidth and Layers'''' Thickness[J].Journal of Shanghai Jiaotong University,2003,37(12):1979-1982. |
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| Authors: | XIE Ben-liang RAO Min-ru |
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| Institution: | XIE Ben-liang~1,RAO Min-ru~2 |
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| Abstract: | A method using epoxy resin ploymer as buffer coat between the transducer and Hg_2I_2 acousto-optic crystal to design the transducer of Hg_2I_2 acousto-optic devices was proposed. According to the equivalent circuit net analysis method, it calculated the functional relationship between transducer loss TL and normalized frequency f/f_0 for the x-cut LN/Hg_2I_2 acousto-optic devices, with different metal coating materials and thickness. From the devices' Brags bandwidth and the technological conditions, the transdacer strucure, the electrode lasyer materials and thickness, the piezoelectric thickness were optimized in the range of 3 dB transducer loss. Hence the octave bandwidth of the transducer is ensured. |
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| Keywords: | acousto-optic device transducer structure bandwidth electrode layers thickness |
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