| 现代MOCVD 技术的发展与展望 |
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| 引用本文： | 文尚胜,廖常俊,范广涵,刘颂豪.现代MOCVD 技术的发展与展望[J].华南师范大学学报(自然科学版),1999,0(3):1-107. |
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| 作者姓名： | 文尚胜 廖常俊 范广涵 刘颂豪 |
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| 作者单位： | 华南师范大学量子电子学研究所!广州510631，华南理工大学应用物理学系广州510641，华南师范大学量子电子学研究所!广州510631，华南师范大学量子电子学研究所!广州510631，华南师范大学量子电子学研究所!广州510631，华南师范大学量子电子学研究所!广州510631，华南师范大学量子电子 |
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| 摘 要： | ＭＯＣＶＤ是一门制造化合物半导体器件的关键技术。本文综合分析了现代ＭＯＣＦＶＤ技术的基本原理，特点及实现这种技术的设备的现状及其发展，重点讨论了能实现衬底温度，衬底表面反应源流均匀性的立式高速涡轮转盘ＭＯＣＶＤ技术，并对ＭＯＣＶＤ技术的进一步改进和应用作了展望。
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| 关 键 词： | MOCVD技术 有机金属化合物 气相外延 衬底 |
RECENT PROGRESS IN MOCVD TECHNOLOGY |
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| WEN Shangsheng , \ LIAO Changujun \ FAN Guanghan \ LIU Songhao \ DENG Yunlong \ ZHANG Guodong Institute of Quantum Electronics,South China Normal University,Guangzhou ,China Depar.RECENT PROGRESS IN MOCVD TECHNOLOGY[J].Journal of South China Normal University(Natural Science Edition),1999,0(3):1-107. |
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| Authors: | WEN Shangsheng \ LIAO Changujun \ FAN Guanghan \ LIU Songhao \ DENG Yunlong \ ZHANG Guodong Institute of Quantum Electronics South China Normal University Guangzhou China Depar |
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| Institution: | WEN Shangsheng 1,2 \ LIAO Changujun 1) \ FAN Guanghan 1) \ LIU Songhao 1) \ DENG Yunlong 1) \ ZHANG Guodong 1) 1) Institute of Quantum Electronics,South China Normal University,Guangzhou 510631,China 2) Depar |
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| Abstract: | Modern MOCVD technology and its development abstract metalorgainc chemical vepor deposition (MOCVD) has been a key technology in manufacturing compound semiconductor devices. In this paper, the recent development of modern MOCVD equipment with sophisticated process control, reliable and readily available on industrial scale, together with its characteristics and the related principles underneath are described. The vertical high speed disk reactor technology meeting the requirements of both a uniform reactant flow over substrate and a uniform substrate temperature is specially focused. The development of MOCVD and its application in the future are also discussed. |
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| Keywords: | MOCVD technology organic metal compound vapor epitaxy substrate |
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