| Hydrogen Bonding in Hydrogenated Amorphous Germanium |
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| 引用本文： | M.S.Abo-Ghazala S.AIHazmy. Hydrogen Bonding in Hydrogenated Amorphous Germanium[J]. 清华大学学报, 2004, 9(2): 177-180 |
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| 作者姓名： | M.S.Abo-Ghazala S.AIHazmy |
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| 作者单位： | [1]PhysicsDepartment,FacultyofScience,MenoufiaUniversity,ShebenEI-Koom,Egypt [2]ChemistryDepartment,FacultyofScience,SanaUniversity,Yemen |
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| 基金项目： | Supported by the International Bureau，Forschungszentrum Juelich |
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| 摘 要： | Thin films of hydrogenated amorphous germanium (a-Ge:H) were prepared by radio frequency glow discharge deposition at various substrate temperatures. The hydrogen distribution and bonding structure in a-Ge:H were discussed based on infrared absorption data. The correlation between infrared absorption spectra and hydrogen effusion measurements was used to determine the proportionality constant for each vibration mode of the Ge-H bonds. The results reveal that the bending mode appearing at 835 cm^-1 is associated with the Ge-H2 (dihydride) groups on the internal surfaces of voids. While 1880 cm^-1 is assigned to vibrations of Ge-H (monohydride) groups in the bulk, the 2000 cm^-1 stretching mode is attributed to Ge-H and Ge-H2 bonds located on the surfaces of voids. For films associated with bending modes in the infrared spectra, the proportionality constant values of the stretching modes near 1880 and 2000 cm^-1 are found to be lower than those of films which had no correspondina bending modes.
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| 关 键 词： | 氢化非晶锗 薄膜 红外吸收光谱 太阳能电池 氢锗结合 氢容量 |
Hydrogen Bonding in Hydrogenated Amorphous Germanium |
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| M. S. Abo-Ghazala,S. Al Hazmy, Physics Department,Faculty of Science,Menoufia University,Sheben El-Koom,Egypt, Chemistry Department,Faculty of Science,Sana University,Yemen. Hydrogen Bonding in Hydrogenated Amorphous Germanium[J]. Tsinghua Science and Technology, 2004, 9(2): 177-180 |
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| Authors: | M. S. Abo-Ghazala S. Al Hazmy Physics Department Faculty of Science Menoufia University Sheben El-Koom Egypt Chemistry Department Faculty of Science Sana University Yemen |
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| Affiliation: | M. S. Abo-Ghazala,S. Al Hazmy,** Physics Department,Faculty of Science,Menoufia University,Sheben El-Koom,Egypt, Chemistry Department,Faculty of Science,Sana University,Yemen |
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| Abstract: | Thin films of hydrogenated amorphous germanium (a-Ge:H) were prepared by radio frequency glow discharge deposition at various substrate temperatures. The hydrogen distribution and bonding struc-ture in a-Ge:H were discussed based on infrared absorption data. The correlation between infrared absorp-tion spectra and hydrogen effusion measurements was used to determine the proportionality constant for each vibration mode of the Ge-H bonds. The results reveal that the bending mode appearing at 835 cm 1 is associated with the Ge-H2 (dihydride) groups on the internal surfaces of voids. While 1880 cm 1 is assigned to vibrations of Ge-H (monohydride) groups in the bulk, the 2000 cm 1 stretching mode is attributed to Ge-H and Ge-H2 bonds located on the surfaces of voids. For films associated with bending modes in the infrared spectra, the proportionality constant values of the stretching modes near 1880 and 2000 cm 1 are found to be lower than those of films which had no corresponding bending modes. |
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| Keywords: | hydrogenated amorphous germanium hydrogen bonding film |
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