| Si/SiO_2和Si/SiN_x/SiO_2超晶格的能带结构 |
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| 引用本文： | 魏屹,董成军,徐明.Si/SiO_2和Si/SiN_x/SiO_2超晶格的能带结构[J].中国科学:物理学 力学 天文学,2010(1). |
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| 作者姓名： | 魏屹 董成军 徐明 |
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| 作者单位： | 四川师范大学物理与电子工程学院;固体物理研究所低维结构物理实验室;中国科学院国际材料物理中心; |
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| 基金项目： | 教育部留学回国人员科研启动项目(批准号:教外司留[2007]1108);;四川省青年科技基金(编号:08ZQ026-025)资助项目 |
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| 摘 要： | 利用Kronig-Penney模型从理论上计算了Si/SiO2和Si/SiNx/SiO2多层膜结构中量子阱的能带结构,进一步分析了各亚层薄膜厚度对能带结构和有效质量的影响.结果发现,适当减少亚层的厚度都能使得纳米Si薄膜的带隙发生明显宽化.在Si/SiO2超晶格中,Si量子阱层带隙能量随着Si层厚度的变化符合EPL(eV)=1.6+0.7/d2关系,与我们的计算结果十分吻合.在Si/SiNx/SiO2超晶格系统中,可以通过控制各亚层厚度,尤其是Si和SiNx层厚度,均能够有效地控制发光.
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| 关 键 词： | K-P模型 超晶格 能带结构 Si层厚度 带隙宽化 量子限制效应 |
Band structure of Si/SiO_2 and Si/SiN_x/SiO_2 superlattices |
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| WEI Yi,DONG ChenJun & XU Ming, Lab for Low-dimensional Structure Physics.Band structure of Si/SiO_2 and Si/SiN_x/SiO_2 superlattices[J].Scientia Sinica Pysica,Mechanica & Astronomica,2010(1). |
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| Authors: | WEI Yi DONG ChenJun & XU Ming Lab for Low-dimensional Structure Physics |
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| Institution: | WEI Yi1,DONG ChenJun1 & XU Ming1,2 1 Lab for Low-dimensional Structure Physics,Institute of Solid State Physics,Sichuan Normal University,Chengdu 610068,China,2 International Center for Material Physics,Chinese Academy of Sciences,Shenyang 110016 |
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| Abstract: | The band structures of Si/SiO2 and Si/SiNx/SiO2 multilayers were calculated by using Kronig-Penney model.The effect of the sublayer thickness on the band structures and effective mass of electrons and holes was analyzed.It is found that the bandgap of the Si sublayer is obviously widened.For Si/SiO2 system,the variation of the bandgap of the Si sublayer conforms to the empirical formula EPL(eV)=1.6+0.7/d2,which is in excellent agreement with our calculations.The calculations in Si/SiNx/SiO2 system reveal th... |
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| Keywords: | kronig-penney model superlattices energy band structure thickness of Si layer bandgap widening quantum confinement effect |
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