| 作为高介电常数栅介质材料的LaErO_3薄膜热稳定性和电学性质的研究 |
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| 引用本文： | 张九如,殷江. 作为高介电常数栅介质材料的LaErO_3薄膜热稳定性和电学性质的研究[J]. 南京大学学报(自然科学版), 2009, 45(2) |
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| 作者姓名： | 张九如 殷江 |
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| 作者单位： | [1]江苏大学理学院,镇江 212013 [2]南京大学物理系,南京 210093 |
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| 摘 要： | 采用脉冲激光淀积法在硅衬底上生长了LaErO3薄膜,用X射线衍射仪、X射线电子能谱仪、高分辨透射电子显微镜研究了该薄膜的热学和电学性质.通过电容-电压测量得到了较好的电容-电压曲线,计算得出等效SiO2厚度为1.4nm.通过高分辨电镜可以看出即使经过700℃30sN2中快速热退火处理LaErO3薄膜与硅衬底之间的反应层也仅有几个原子层的厚度.X射线电子能谱分析得到非常少量的SiO2在沉积的过程中形成.测量的热学和电学性质表明LaErO3薄膜是高介电常数栅介质材料非常有前途的候选材料.
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| 关 键 词： | 高介电常数栅介质材料 脉冲激光淀积 薄膜 |
Thermal stability and electrical properties of high-k LaErO_3 films |
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| Zhang Jiu-Ru,Yin Jiang. Thermal stability and electrical properties of high-k LaErO_3 films[J]. Journal of Nanjing University: Nat Sci Ed, 2009, 45(2) |
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| Authors: | Zhang Jiu-Ru Yin Jiang |
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| Affiliation: | 1.School of Science;Jiangsu University;Zhenjiang;212013;China;2.Department of Physics;Nanjing University;Nanjing;210093;China |
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| Abstract: | LaErO3 films were prepared on silicon substrates.The thermal stability and electrical properties of these films were characterized by using X-ray diffraction,X-ray photoelectron spectroscopy(XPS)and high resolution transition electron microscopy(HRTEM).The good capacity-voltage curve of the stack Pt/LaErO3/Si was obtained,and the calculated equivalent thickness of SiO2 for high-k LaErO3 films was about 1.4 nm.The HRTEM image of the hetero-structure LaErO3/Si show that there exists an interface with a thickn... |
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| Keywords: | high-k dielectrics pulsed laser deposition film |
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