| 用微结构改进InGaAlP量子阱发光二极管的出光强度 |
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| 引用本文： | 隋文辉,章蓓,王大军,栾峰,徐万劲,马晓宇. 用微结构改进InGaAlP量子阱发光二极管的出光强度[J]. 北京大学学报(自然科学版), 2003, 39(3): 331-335 |
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| 作者姓名： | 隋文辉 章蓓 王大军 栾峰 徐万劲 马晓宇 |
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| 作者单位： | 1. 北京大学物理学院、人工微结构和介观物理国家重点实验室,北京,100871
2. 中国科学院半导体所,北京,100083 |
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| 基金项目： | 国家自然科学基金;69896260,60077022,60276034; |
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| 摘 要： | 针对半导体发光二极管 (LED)出光效率低下的问题 ,提出了一个在LED顶部引入周期性微结构的新设想。根据这一设想 ,采用简单的微加工技术研制成功带有环形槽微结构的圆台形InGaAlP量子阱LED。结果表明 ,这种新型LED在竖直方向的出射光强比不带微结构的LED有明显增强。这一成功为改进发光二极管的出光效率提供了新的途径
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| 关 键 词： | 发光二极管 出光效率 InGaAlP量子阱 微结构 |
| 修稿时间： | 2002-04-15 |
The Improvement of Extractive Emission in InGaAlP Quantum Wells Light Emitting Diodes by Microstructures |
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| SUI Wenhui ZHANG Bei WANG Dajun LUAN Feng XU Wanjin. The Improvement of Extractive Emission in InGaAlP Quantum Wells Light Emitting Diodes by Microstructures[J]. Acta Scientiarum Naturalium Universitatis Pekinensis, 2003, 39(3): 331-335 |
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| Authors: | SUI Wenhui ZHANG Bei WANG Dajun LUAN Feng XU Wanjin |
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| Abstract: | To solve the problem of low extractive efficiency in semiconductor light emitting diodes(LED),a proposal of introducing microstructures onto the top of LED was presented.Based on this idea,the InGaAlP quantum wells LEDs with centric ring-grooves microstructures have been successfully prepared by the conventional micro-fabrication.As a result,the vertical extractive light intensity from the novel LED was obviously stronger than that of the LED without microstructures.This success provides a new method for improving extraction efficiency from LED. |
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| Keywords: | light emitting diode extraction efficiency InGaAlP quantum well microstructure |
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