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Electronic States of Some Semiconductor Clusters
作者姓名:谭航  冯平义  廖沐真
作者单位:TAN Hang(谭 航),FENG Pingyi(冯平义),LIAO Muzhen(廖沐真)Center for Advanced Study,Department of Chemistry,Tsinghua University,Beijing\ 100084; Shanghai Institute of Metallurgy,Shanghai\ 200050
摘    要:IntroductionSemiconductorelementssuchasindiumandarsenichavebeenstudiedextensively.Severaltopicssuchasdopinganddefect[15],epi...


Electronic States of Some Semiconductor Clusters
TAN Hang,FENG Pingyi,LIAO Muzhen.Electronic States of Some Semiconductor Clusters[J].Tsinghua Science and Technology,1999,4(2).
Authors:TAN Hang  FENG Pingyi  LIAO Muzhen
Abstract:Potential surfaces and equilibrium geometries of InAs 2, In 2As, InAs 2 and In 2As were studied using the complete active space multi configuration self consistent field (CASMCSCF) technique. Two electronic states, namely 2B 2 and 2B 1, were found to prevail as the ground states for the InAs 2 and In 2As trimers, respectively. The corresponding adiabatic ionization energies were computed and the leading configurations of the ground states were analyzed according to the wavefunctions.
Keywords:electronic state  equilibrium geometry  semiconductor cluster  complete active space multi-configuration self-consistent field (CASMCSCF)
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