基于氮化镓器件的LLC谐振变换器的驱动波形优化及损耗分析

随着第三代半导体器件氮化镓器件的逐渐成熟,使进一步提高直流电-直流电(DC-DC)变换器效率成为可能。探讨了氮化镓栅极正向阈值电压较小和具有反向导通能力的特性,并针对这些特性设计了新的驱动方式。之后从变换器损耗的角度,提出了基于损耗分析的最小损耗时的死区时间,确定了驱动波形的具体参数。并优化设计了主要磁性元件的设计流程以减小涡流损耗。经过仿真软件验证结论后最终给出了设计参数,并制作出了高效率的试验样机,证明了使用新型驱动电路的氮化镓LLC变换器高效、工作稳定。

Driving waveform optimize of GaN-Tr LLC SRC and Loss Analysis

Along with the maturity of the third generation semi-conductor, the GaN device, the efficiency of DC-DC converter can further improve. This paper mainly discussed the different characteristics between traditional silicon devices and gallium nitride ones, such as the low gate threshold voltage and the capacity of reverse conduction. Owing to these characteristics, design a new driving method. An optimized design of dead-time aiming for improving efficiency was investigated. At last the approach of magnetic components design which can decrease the eddy current losses was illustrated. An experimental prototype with high efficiency was developed on mentioned approach to prove the correctness of the theoretical analysis.