Improvement of extraction efficiency for GaN-based light emitting diodes |
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| Authors: | SU YanKuin HUANG ChunYuan CHEN JianJhong KAO ChienChih & TSAI ChunFu |
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| Affiliation: | SU YanKuin1,2,3,4,HUANG ChunYuan1,CHEN JianJhong1,KAO ChienChih1,4 & TSAI ChunFu1,4 1 Department of Electrical Engineering,National Cheng-Kung University,Tainan 70101,Taiwan,China,2 Department of Electrical Engineering,Kun Shan University of Technology,Yung-Kang City 70101,3 Institute of Microelectronics,4 Advanced Optoelectronic Technology Center,National Cheng Kung University |
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| Abstract: | A simple, low cost method for mass production to enhance the light extraction efficiency of GaN-related LEDs was proposed. With appropriate process parameters, the nature lithography of nanosphere can be used to fabricate two- dimensional nanostructures, including the nanomesh ZnO layer, photonic crystal (PhC) patterned p-GaN, and patterned sapphire substrates. Based on preliminary results, the extraction efficiencies of LEDs with these nanostructures can thus be improved and the nature lithography is demon... |
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| Keywords: | extraction efficiency light emitting diodes patterned sapphire substrate |
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