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Si/Al/BN多层膜的制备及研究
引用本文:曲长庆,孙连婕,陈希明,郭燕,吴小国.Si/Al/BN多层膜的制备及研究[J].天津理工大学学报,2012,28(1):76-78,88.
作者姓名:曲长庆  孙连婕  陈希明  郭燕  吴小国
作者单位:天津理工大学电子信息工程学院,天津市薄膜电子与通信器件重点实验室,天津300384
基金项目:国家自然科学基金(50972105;60806030);天津市自然科学基金(09JCZDJC16500;08JCYBJC14600)
摘    要:本文采用磁控溅射系统制备了Si/Al/BN多层膜结构,并通过XRD,AFM,傅立叶红外光谱仪,纳米压痕仪等对Si/Al/BN多层膜结构进行了表征,表征结果表明本实验制备的Si/Al/BN多层膜基片符合高频声表面波器件基片的要求,为金刚石/IDT/BN多层膜超高频声表面波器件的制备奠定了基础.

关 键 词:Si/Al/BN多层膜  高频声表面波  原子力显微镜  纳米压痕仪

Research on the deposition of Si/Al/BN multilayer
QU Chang-qing , SUN Lian-jie , CHEN Xi-ming , GUO Yan , WU Xiao-guo.Research on the deposition of Si/Al/BN multilayer[J].Journal of Tianjin University of Technology,2012,28(1):76-78,88.
Authors:QU Chang-qing  SUN Lian-jie  CHEN Xi-ming  GUO Yan  WU Xiao-guo
Institution:(School of Electronic Information Engineering,Tianjin Key Laboratory of Film Electronic and Communication Device,Tianjin University of Technology,Tianjin 300384,China)
Abstract:Si/Al/BN multilayer structure was deposited by magnetron sputtering system,and characterized by XRD,AFM,Fourier transform infrared spectroscopy,Nano-indenter.And the characterization show that the experimental preparation of Si/Al/ BN multilayer substrate meet the requirements of high-frequency surface acoustic wave device,and make a foundation for the preparation of diamond/IDT/BN multilayer ultra-high frequency SAW devices.
Keywords:Si/Al/BN multilayers  high-frequency SAW  AFM  nano-indenter
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