| Fe掺杂In2O3薄膜的微结构与磁、输运性能 |
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| 引用本文： | 陈艳红,冯德强,吴华阳,张浩,孙会杰,刘技文,安玉凯.Fe掺杂In2O3薄膜的微结构与磁、输运性能[J].天津理工大学学报,2012,28(3):14-17. |
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| 作者姓名： | 陈艳红 冯德强 吴华阳 张浩 孙会杰 刘技文 安玉凯 |
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| 作者单位： | 1. 天津理工大学材料科学与工程学院,天津,300384
2. 北京航天计量测试技术研究所,北京,100076 |
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| 基金项目： | 国家自然科学基金，教育部大学生创新实验计划 |
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| 摘 要： | 采用磁控溅射方法制备Fe掺杂In2O3基稀磁半导体(DMS)薄膜.通过XRD、XPS和XANES分析,确定Fe掺杂In2O3薄膜中没有出现Fe团簇以及Fe的氧化物第二相,Fe元素是以Fe2+和Fe3+的形式共同存在.通过输运特性ρ-T和HALL分析确定Fe掺杂In2O3薄膜的载流子浓度约4×1018cm-3,且Fe的掺杂并未改变In2O3的半导体属性.SQUID磁性测试显示Fe掺杂In2O3样品具有明显的室温铁磁性,铁磁性可以由束缚磁极子模型或双交换机制来解释.
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| 关 键 词： | Fe掺杂 In2O3薄膜 微结构 磁性 |
Microstructures, magnetic and transport properties of Fe-doped In2O3 films |
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| CHEN Yan-hong
,
FENG De-qiang
,
WU Hua-yang
,
ZHANG Hao
,
SUN Hui-jie
,
LIU Ji-wen
,
AN Yu-kai.Microstructures, magnetic and transport properties of Fe-doped In2O3 films[J].Journal of Tianjin University of Technology,2012,28(3):14-17. |
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| Authors: | CHEN Yan-hong FENG De-qiang WU Hua-yang ZHANG Hao SUN Hui-jie LIU Ji-wen AN Yu-kai |
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| Institution: | 1(1.School of Material Science and Engineering,Tianjin University of Technology,Tianjin 300384,China; 2.Beijing Aerospace Institute for Metrology and Measurement Technology,Beijing 100076,China) |
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| Abstract: | In this paper,the Fe-doped In2O3-base diluted magnetic semiconductors(DMS) films were deposited by RF magnetron sputtering techniques.By these analyses of XRD、XPS and XANES,it can be concluded that there do not exist Fe cluster,second phase oxide in Fe-doped In2O3 films,and Fe atoms coexist by the form of Fe2+ and Fe3+.By the analyses of ρ-T and HALL measurements,the carriers concentration of Fe-doped In2O3 films is about 4×1018cm-3 and the Fe doping do not change semiconductor properties of In2O3.The SQUID measurements showed that Fe-doped In2O3 sample has obviously room-temperature ferromagnetism,the ferromagnetism can be explained by BMP model or double exchange model. |
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| Keywords: | Fe-doped In2O3 films microstructures magnetic properties |
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