| Si衬底上金刚石薄膜的成核和生长机理 |
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| 引用本文： | 屠宇强,夏义本.Si衬底上金刚石薄膜的成核和生长机理[J].应用科学学报,1993,11(3):258-264. |
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| 作者姓名： | 屠宇强 夏义本 |
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| 作者单位： | 上海科学技术大学
(屠宇强，夏义本)，上海科学技术大学(王鸿) |
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| 摘 要： | 以酒精为碳源,用热丝CVD法,对不同表面状况的Si衬底作金刚石沉积比较.讨论了薄膜的成核、生长机制,认为CH_2是成核的主要气相种类,H原子直接参与了成核和生长,它们在薄膜沉积中起了极为重要的作用.解释了毛糙表面的Si衬底上金刚石易成核的现象.
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| 关 键 词： | 金刚石薄膜 热丝法 成核 生长机理 |
NUCLEATION AND GROWTH MECHANISMS OF DIAMOND FILM ON SILICON SUBSTRATE |
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| TU YUQIANG XIA YIBEN WANG HONG.NUCLEATION AND GROWTH MECHANISMS OF DIAMOND FILM ON SILICON SUBSTRATE[J].Journal of Applied Sciences,1993,11(3):258-264. |
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| Authors: | TU YUQIANG XIA YIBEN WANG HONG |
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| Institution: | Shanghai University of Science and Technology |
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| Abstract: | Diamond crystallites have been grown on silicon substrates of different surface conditions by hot-filament method using alcohol. The nuoleation and growth mechanisms of the diamond film have been discussed. CH3 is considered to be the main gas species of diamond nucleation; hydrogen atoms play an important role in nucleation and growth; and it is easier for diamond to nucleate on a silicon substrate of comparatively rough surface than on the one of a glossy surface. |
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| Keywords: | diamond film hot filament method rough surface nucleating growth mechanism |
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