| 基于电子温度效应的SiGe、SiGeC异质结晶体管的基区渡越时间模型 |
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| 引用本文： | 高树钦,李壵. 基于电子温度效应的SiGe、SiGeC异质结晶体管的基区渡越时间模型[J]. 中国科学技术大学学报, 2010, 40(2). DOI: 10.3969/j.issn.0253-2778.2010.02.011 |
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| 作者姓名： | 高树钦 李壵 |
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| 作者单位： | 中国科学技术大学物理系微电子实验室,安徽合肥,230026 |
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| 摘 要： | 提出了SiGe和SiGeC异质结晶体管基区渡越时间的一种闭式物理模型,该模型考虑了电子温度效应.计入薄基区内强电场(该电场源起于Ge,C元素的掺杂)引起的电子温度变化,得到的基区渡越时间值与漂移-扩散模型有所不同.随着Ge含量的增加,两者的差别不能再忽略.
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| 关 键 词： | 电子温度效应 SiGe异质结晶体管 SiGeC异质结晶体管 基区渡越时间 |
A base transit time model considering electron temperature effect in SiGe and SiGeC HBT |
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| GAO Shuqin,LI Yao. A base transit time model considering electron temperature effect in SiGe and SiGeC HBT[J]. Journal of University of Science and Technology of China, 2010, 40(2). DOI: 10.3969/j.issn.0253-2778.2010.02.011 |
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| Authors: | GAO Shuqin LI Yao |
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| Affiliation: | GAO Shuqin,LI Yao(Microelectronics Laboratory,Physics Department,University of Science , Technology of China,Hefei 230026,China) |
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| Abstract: | A closed-form physical model was given for SiGe and SiGeC HBT considering electron temperature effect.Incorporating electron temperature variation induced by high electric field(caused by Ge,C gradient) in the thin base,the base transit time shows different values compared with the drift-diffusion model.As Ge gradient increases,the difference can no longer be neglected. |
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| Keywords: | electron temperature effect SiGe HBT SiGeC HBT base transit time |
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