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InSb磁阻元件的特性及无接触旋转传感器
引用本文:张之圣,白花珍.InSb磁阻元件的特性及无接触旋转传感器[J].天津大学学报(自然科学与工程技术版),1999,32(6):774-776.
作者姓名:张之圣  白花珍
作者单位:天津大学电子信息工程学院
摘    要:介绍了半导体材料的霍尔效应及磁阻效应,讨论了磁阻元件的特性,找到了InSb磁阻特性曲线的拐点,提出旋转传感器的工作原理与结构设计,研制这种传感器的关键在于桥式电路的设计。本文也给出测试结果和应用前景。

关 键 词:磁阻元件  磁阻特性  旋转传感器  半导体  锑化铟

CHARACTERISTIC PROPERTY OF InSb MAGNETORESISTIVE DEVICE AND A CONTACTLESS SENSOR FOR MEASURING ROTATOR
Zhang Zhisheng,Bai Huazhen,Chen Jinting,Chen Zhiyong,Wang Yudong.CHARACTERISTIC PROPERTY OF InSb MAGNETORESISTIVE DEVICE AND A CONTACTLESS SENSOR FOR MEASURING ROTATOR[J].Journal of Tianjin University(Science and Technology),1999,32(6):774-776.
Authors:Zhang Zhisheng  Bai Huazhen  Chen Jinting  Chen Zhiyong  Wang Yudong
Abstract:In this paper the Hall effect and magnetoresistive effect of semiconductive materials are introduced.The characteristic property of magnetoresistive device is discussed.We have found the inflection point of InSb magnetoresistive curve.The operating principle and the structural design of a sensor for measuring rotators are presented.The key of making the sensor lies in design of bridge circuit.Its measurement results and its application are given too.
Keywords:magnetoresistive device  magnetoresistive characteristic  sensor for measuring rotator  
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