GaAs MMIC钝化层介质Si3N4的可靠性评价

在斜坡电压应力条件下对GaAsMMIC介质层Si3N4的击穿特性进行了测试，探讨了电容面积、周长以及斜率对与时间有关的介质击穿（TDDB）特性的影响．实验结果表明，电容面积越大，周长越长，介质中的缺陷就越多，其击穿电压也就越低，可靠性越差．根据TDDB线性电场模型，采用不同斜率的斜坡电压应力测试数据预测了正常工作电压下的Si3N4寿命．与温度加速实验相比，文中所提方法快速、成本低廉．

Reliability Evaluation of Dielectric Si3N4 Based on GaAs MMIC

The breakdown characteristics of dielectric Si_3N_4 based on GaAs MMIC(Microwave Monolithic Integrated Circuit) were studied by using the ramped voltage-accelerated testing.The effects of the area and perimeter of capacitor,as well as the ramped rate on TDDB(Time Dependent Dielectric Breakdown) characteristics were also investigated.The results indicate that a greater area or a longer perimeter will result in more defects in the dielectric,thus causing much lower breakdown voltage and poorer reliability.According to the results of the ramped voltage-accelerated testing with different ramped rates,the lifetime of silicon nitride capacitor at a normal working voltage was finally predicted based on the TDDB linear field model.It is concluded that,compared with the temperature-accelerated testing,the proposed method is of much faster speed and lower cost.