| 高压下ZnS的电输运行为 |
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| 引用本文： | 杨洁,田红志,韩永昊.高压下ZnS的电输运行为[J].吉林大学学报(理学版),2006,44(5):775-778. |
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| 作者姓名： | 杨洁 田红志 韩永昊 |
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| 作者单位： | 空军航空大学,基础部,长春,130022;吉林大学学报(信息科学版)编辑部,长春,130012;东南大学,物理系,南京,210096 |
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| 摘 要： | 通过在金刚石对顶砧上集成以氧化铝薄膜为绝缘层的微型测量电路, 原位测量了ZnS电阻率随压力的变化, 证实ZnS的压致相变为半导体到半导体相变, 而非金属化相变, 并发现ZnS相变的可逆性与相变的迟滞现象.
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| 关 键 词： | 电输运 高压 ZnS 电阻率 |
| 文章编号： | 1671-5489(2006)05-0775-04 |
| 收稿时间： | 2005-11-17 |
| 修稿时间： | 2005年11月17 |
Electrical Transition Behavior of ZnS under High Pressure |
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| YANG Jie,TIAN Hong-zhi,HAN Yong-hao.Electrical Transition Behavior of ZnS under High Pressure[J].Journal of Jilin University: Sci Ed,2006,44(5):775-778. |
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| Authors: | YANG Jie TIAN Hong-zhi HAN Yong-hao |
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| Institution: | 1. Department of Foundation, Aviation University of Air Force, Changchun 130022, China; 2. Editorial Department of Journal of Jilin University (Information Science Edition), Changchun 130012, China; 3. Department of Physics, Southeast University, Nanjing 210096, China |
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| Abstract: | The resistance of ZnS was in-situ measured under high pressure by using integrated microcircuit on DAC with an alumina film as a insulating layer.It has been confirmed that the phase transition of ZnS is a semiconductor to semiconductor phase transition,not a semiconductor to metallic phase transition.The reversibility of the phase transition of ZnS is observed.In addition,the hysteresis of the phase transition of ZnS was found. |
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| Keywords: | ZnS |
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