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| 等温平台石墨炉原子吸收光谱法测定高纯铟中痕量杂质铅和砷 | |
| 引用本文： | 邢志强,郭兴家,康平利,李莹,谢颖,赵晓冬,张冬梅. 等温平台石墨炉原子吸收光谱法测定高纯铟中痕量杂质铅和砷[J]. 辽宁大学学报(自然科学版), 2005, 32(4): 293-295 |
| 作者姓名： | 邢志强 郭兴家 康平利 李莹 谢颖 赵晓冬 张冬梅 |
| 作者单位： | 1. 辽宁大学,化学科学与工程学院,辽宁,沈阳,110036 2. 沈阳化工学院,辽宁,沈阳,110021 3. 辽宁省药品检验所,辽宁,沈阳,110025 4. 辽阳职业技术学院,辽宁,辽阳,111000 |
| 摘 要： | 利用石墨炉原子吸收法，在等温平台条件下利用标准加入法直接测定了高纯铟中的痕量杂质铅和砷．并对石墨炉加热程序中的干燥时问、灰化温度及原子化温度进行了优化，同时也考察了介质酸度的影响．本方法中铅和砷的特征质量分别为37．8pg和40．7pg，相对标准偏差平均值分别为2．8％和2．0％，加标回收率分别为85．6％～95．4％和97．3％～105．0％，是测定高纯铟中杂质铅和砷的一种简单、快速、准确的方法． |
| 关 键 词： | 石墨炉原子吸收法 等温平台技术 高纯铟 铅 砷 |
| 文章编号： | 1000-5846（2005）04-0293-03 |
| 收稿时间： | 2005-07-09 |
| 修稿时间： | 2005-07-09 |
GFAAS with STPF Technique for the Determination of Trace Lead and Arsenic in High Purity Indium |
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| XING Zhi-qiang,GUO Xing-jia,KANG Ping-li,LI Ying,XIE Ying,ZHAO Xiao-dong,ZHANG Dong-mei. GFAAS with STPF Technique for the Determination of Trace Lead and Arsenic in High Purity Indium[J]. Journal of Liaoning University(Natural Sciences Edition), 2005, 32(4): 293-295 | |
| Authors: | XING Zhi-qiang GUO Xing-jia KANG Ping-li LI Ying XIE Ying ZHAO Xiao-dong ZHANG Dong-mei |
| Affiliation: | 1. Institute of Chemistry and Engineering, Liaoning University, Shenyang 110036, China ; 2. Shenyang Institute of Chemical Technology, Shenyang 110021, China ; 3. Liaoning Institute for Drug Control, Shenyang 110025, China ; 4. Liaoyang Higher Vocational College, Liaoyang 111000, China |
| Abstract: | Trace lead and arsenic in high purity indium were determined by graphite furnace atomic absorption spectrometry with STPF technique. The standard addition method was adapted to eliminate the influence of matrix indium for the determination of lead and arsenic. The drying time, the ashing temperature and the atomizing temperature were optimized, but other conditions of graphite furnace heating were the recommended values of the instrument. The effect of acid was also studied. The characteristic masses of the method for lead and arsenic are 37.8pg and 40.7pg respectively. The average RSDs are 2.8% and 2.0% respectively. The recoveries are in the range of 85.6 ~ 95.4% and 97.3- 105.0% respectively. The experiments showed that it was a simple, quick and accurate method to determine lead and arsenic in high purity indium. |
| Keywords: | GFAAS STPF high purity indium lead arsenic. |
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