| 高频溅射α-Si:F,H薄膜光电导的实验与计算 |
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| 引用本文： | 李清山,马玉蓉. 高频溅射α-Si:F,H薄膜光电导的实验与计算[J]. 中国科学技术大学学报, 1989, 0(3) |
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| 作者姓名： | 李清山 马玉蓉 |
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| 作者单位： | 曲阜师范大学，中国科技大学 |
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| 摘 要： | 通过对射频溅射RF a-Si:F,H薄膜样品光电导随入射光的波长、光强以及温度变化的测量,定量地考察了带隙、带尾态的宽度和带隙中悬键态密度与氟含量的关系,给出了氟原子在网络中一种可能的分布形式。按照Rose模型,计算了电光导随温度的变化关系,给出了局域态分布的位置、高度、宽度以及俘获截面等参量,理论计算与实验符合较好。
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| 关 键 词： | a-Si:F H薄膜 光电导 带隙 |
Measurement and Calculation of Photoconductivity in R. F. Sputtered Amorphous Si: F, H Film |
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| Li Qingshan,Ma Yurong Qufu Normal University China. University of Science and Technology. Measurement and Calculation of Photoconductivity in R. F. Sputtered Amorphous Si: F, H Film[J]. Journal of University of Science and Technology of China, 1989, 0(3) |
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| Authors: | Li Qingshan Ma Yurong Qufu Normal University China. University of Science Technology |
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| Affiliation: | Li Qingshan;Ma Yurong Qufu Normal University China. University of Science and Technology |
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| Abstract: | The photoconductivities of amorphous Si:F, H films prepared by sputtering are measured as a function of wavelengths, intensities of incident illumination and temperature. The relationships between the band gaps. tailwidths density of states of dangling bonds and the contents of fluorine are quantitatively investigated and a possible configuration of fluorine atoms in the network in the films is proposed. In terms of the model proposed byRose, the change of photoconductivity with temperature is calculated. The locations, widths, peaks of localized states in gaps and the capture cross section are obtained. The results of the calculations agree with the measure-ments. |
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| Keywords: | a-Si: F H films photoconductivity dangling bond |
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