| N掺杂SiC薄膜的制备及磁有序 |
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| 引用本文： | 孟旭东,甄聪棉,马丽,潘成福,侯登录.N掺杂SiC薄膜的制备及磁有序[J].河北师范大学学报(自然科学版),2012,36(1):41-44. |
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| 作者姓名： | 孟旭东 甄聪棉 马丽 潘成福 侯登录 |
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| 作者单位： | 1. 河北省新型薄膜材料实验室,河北石家庄050024;河北师范大学物理科学与信息工程学院,河北石家庄050024;河北北方学院物理系,河北张家口075000
2. 河北省新型薄膜材料实验室,河北石家庄050024;河北师范大学物理科学与信息工程学院,河北石家庄050024 |
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| 基金项目： | 国家自然科学基金，河北省自然科学基金，河北北方学院自然科学基金 |
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| 摘 要： | 采用磁控溅射技术制备了N掺杂SiC薄膜,利用X线衍射仪、傅里叶红外光谱仪、物理特性测试系统对薄膜成分、结构、磁性进行了表征.结果表明,N掺杂SiC薄膜具有室温铁磁性,N掺杂含量对薄膜的室温铁磁性具有很大的影响,薄膜室温铁磁性可能是由于N替代C来控制Si空位缺陷的电荷态和自旋极化产生的.
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| 关 键 词： | N掺杂SiC薄膜 室温铁磁性 磁控溅射 |
On Preparation and Magnetic Ordering of the N Doped SiC Films |
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| MENG Xudong
,
ZHEN Congmian
,
MA Li
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PAN Chengfu
,
HOU Denglu.On Preparation and Magnetic Ordering of the N Doped SiC Films[J].Journal of Hebei Normal University,2012,36(1):41-44. |
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| Authors: | MENG Xudong ZHEN Congmian MA Li PAN Chengfu HOU Denglu |
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| Institution: | 1,2(1.Hebei Advanced Thin Films Laboratory,Hebei Shijiazhuang 050024,China;2.College of Physics Science and Information Engineering,Hebei Normal University,Hebei Shijiazhuang 050024,China;3.Department of Physics,Hebei North University,Hebei Zhangjiakou 075000,China) |
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| Abstract: | The N doped SiC films were prepared by magnetron sputtering technique.The microstructures and ferromagnetism of the films were characterized with X-ray diffraction,fourier transform infrared spectrometer and physical property measurement system.Room temperature ferromagnetism was observed in the N doped SiC films.The result indicates that N content in the film has a great effect on the observed room temperature ferromagnetism of the film.Charge states and spin polarizations of silicon vacancy defects can be manipulated by N atoms which induces the ferromagnetism. |
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| Keywords: | the N doped SiC films room-temperature ferromagnetism magnetron sputtering |
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