| 基于单分子层去除机理的芯片化学机械抛光材料去除模型 |
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| 引用本文： | 赵永武,王永光.基于单分子层去除机理的芯片化学机械抛光材料去除模型[J].江南大学学报(自然科学版),2007,6(1):86-90. |
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| 作者姓名： | 赵永武 王永光 |
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| 作者单位： | 江南大学,机械工程学院,江苏,无锡,214122 |
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| 基金项目： | 江苏省自然科学基金项目(BK2004020)，教育部回国人员启动基金项目([2004]527)，清华大学摩擦学国家重点实验室开放基金(SKLT04-06)，江南大学重大基金(207000-21054200)，江南大学预研基金(207000-52210434)，教育部重点项目(教外字[2006]233号) |
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| 摘 要： | 基于单分子层材料的去除机理,应用微观接触力学和概率统计方法建立了化学机械抛光(CMP)及材料去除的数学物理模型.模型揭示了材料的去除率和磨粒的大小、浓度呈非线性关系,而且模型预测结果与已有的试验数据相吻合,为进一步研究磨粒对CMP材料去除的影响提供了新的研究视角.
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| 关 键 词： | 化学机械抛光 模型 浓度 |
| 文章编号： | 1671-7147（2007）01-0086-05 |
| 收稿时间： | 2006-12-20 |
| 修稿时间： | 2006-12-202007-01-04 |
Modeling of Chemical Mechanical Polishing Material Removal Based on Molecular-Scale Mechanism |
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| ZHAO Yong-wu,WANG Yong-guang.Modeling of Chemical Mechanical Polishing Material Removal Based on Molecular-Scale Mechanism[J].Journal of Southern Yangtze University:Natural Science Edition,2007,6(1):86-90. |
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| Authors: | ZHAO Yong-wu WANG Yong-guang |
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| Institution: | School of Mechanical Engineering, Southern Yangtze University, Wuxi 214122, China |
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| Abstract: | Abrasive particle is a very important component of the chemical mechanical polishing(CMP) system.The paper addresses the effects of abrasive particle size and concentration within the CMP process based on a molecular-scale removal model.The paper also considers the effects of the polishing pad.The proposed model based on the contact mechanics and probability statistics predicts a nonlinear dependence of removal rate on particle size and concentration,which is in good agreement with the trend observed experimentally.The study also deepens a understanding of the effects of the abrasive particles size and concentration. |
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| Keywords: | chemical mechanical polishing model concentration |
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