XU Jin, LUO Jianbin, LU Xinchun, ZHANG Chaohui & PAN Guoshun State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China
Abstract:
Chemical mechanical polishing (CMP) process is commonly regarded as the best method for achieving global planarization in the field of surface finishing with ultra-precision. The development of investigation on material removal mechanisms for different materials used in com-puter hard disk and ultra-large scale integration fabrication are reviewed here. The mechanisms underlying the interac-tion between the abrasive particles and polished surfaces during CMP are addressed, and some ways to investigate the polishing mechanisms are presented.