首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Thermoelectric effect of silicon films prepared by aluminum-induced crystallization
Authors:Qing-run Hou  Bing-fu Gu  Yi-bao Chen  Yuan-jin He
Institution:1. Department of Physics, Tsinghua University, Beijing, 100084, China
Abstract:Aluminum-induced crystallized silicon films were prepared on glass substrates by magnetron sputtering. Aluminum was added in the silicon films intermittently by the regular pulse sputtering of an aluminum target. The amount of aluminum in the silicon films can be controlled by regulating the aluminum sputtering power and the sputtering time of the undoped silicon layer; thus, the Seebeck coefficient and electrical resistivity of the polycrystalline silicon films can be adjusted. It is found that, when the sputtering power ratio of aluminum to silicon is 16%, both the Seebeck coefficient and the electrical resistivity decrease with the increasing amount of aluminum as expected; the Seebeck coefficient and the electrical resistivity at room temperature are 0.185?C0.285 mV/K and 0.30?C2.4 ??·cm, respectively. By reducing the sputtering power ratio to 7%, however, the Seebeck coefficient does not change much, though the electrical resistivity still decreases with the amount of aluminum increasing; the Seebeck coefficient and electrical resistivity at room temperature are 0.219?C0.263 mV/K and 0.26?C0.80 ??·cm, respectively.
Keywords:
本文献已被 万方数据 SpringerLink 等数据库收录!
点击此处可从《矿物冶金与材料学报》浏览原始摘要信息
点击此处可从《矿物冶金与材料学报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号