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CaCu3Ti4O12-xZnO陶瓷介电性能研究
引用本文:闫妍,刘鹏,杨锋莉,王亚娟. CaCu3Ti4O12-xZnO陶瓷介电性能研究[J]. 陕西师范大学学报(自然科学版), 2012, 0(3): 23-26
作者姓名:闫妍  刘鹏  杨锋莉  王亚娟
作者单位:陕西师范大学物理学与信息技术学院
基金项目:国家自然科学基金资助项目(50872078)
摘    要:采用传统陶瓷烧结方法,制备了CaCu3Ti4O12(CCTO)-xZnO(x=0,0.05,0.20,0.60,1.00)陶瓷样品.应用X射线衍射仪及扫描电镜,分别确定了样品的物性和形貌.利用阻抗分析仪测定了不同频率和温度下材料的介电常数和介电损耗,研究了ZnO对CCTO材料的微观结构和介电性能的影响.结果表明:添加ZnO可促进CCTO晶界处小晶粒生长,抑制大晶粒生长,降低CCTO陶瓷样品高频范围的介电损耗.当x=1时,在1kHz~1MHz频率范围内,tanδ均小于1.1,并且可将陶瓷的压敏电压提高至100V/mm.这为优化CCTO材料性能、推进其在电容器方面的应用,提供了一定的实验依据.

关 键 词:CaCu3Ti4O12(CCTO)  巨介电常数  压敏电压

Dielectric properties of ZnO doped CaCu3Ti4O12 composite ceramics
YAN Yan,LIU Peng,YANG Feng-li,WANG Ya-juan. Dielectric properties of ZnO doped CaCu3Ti4O12 composite ceramics[J]. Journal of Shaanxi Normal University: Nat Sci Ed, 2012, 0(3): 23-26
Authors:YAN Yan  LIU Peng  YANG Feng-li  WANG Ya-juan
Affiliation:(College of Physics and Information Technology, Shaanxi Normal University,Xi′an 710062,Shaanxi,China)
Abstract:The CaCu3Ti4O12(CCTO)-xZnO(x=0,0.05,0.20,0.60,1.00) ceramics is prepared with the solid-state reaction.The phase structure of CaCu3Ti4O12 ceramics are measured by X-ray diffraction,and the morphology of CaCu3Ti4O12 ceramics is observed by scanning electron microscopy(SEM).Dielectric properties of ZnO doped CaCu3Ti4O12 composite ceramics are tested by the impedance analyzer.The result indicate that ZnO doping improve the growth of small grain and prevent that of the large grain at grain boundary.Meanwhile,the dielectric loss at the higher frequency is decreased.At x=1,the tan δ is less than 1.1 in the frequency range of 1 kHz~1 MHz,and the ceramic varistor voltage is increased to 100 V/mm.
Keywords:CaCu3Ti4O12(CCTO)  giant dielectric constant  varistor voltage
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