| 半导体发光二极管的研究与分析 |
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| 引用本文： | 沈桂芬,姚朋军,高嵩,刘兴辉,吕品.半导体发光二极管的研究与分析[J].辽宁大学学报(自然科学版),2001,28(2):141-147. |
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| 作者姓名： | 沈桂芬 姚朋军 高嵩 刘兴辉 吕品 |
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| 作者单位： | 辽宁大学物理系, |
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| 摘 要： | 在简介半导体发光二极管的辐射复合基础上，。详细讨论了包括Ⅲ-Ⅳ，Ⅱ-Ⅵ族化合物半导体材料和多孔硅（PS）等新发光材料在内的各种发光材料的发光机理，发光二极管的结构与特性，并介绍了半导体发光二极管在近代科学中的应用。
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| 关 键 词： | 半导体发光二极管 辐射复合 电致发光 发光材料 发光机理 发光晶体 |
| 文章编号： | 1000-5846(2001)02-0141-07 |
| 修稿时间： | 2000年12月7日 |
Research on and Analysis of Semiconductor Luminescence Diode |
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| SHEN Guifen,YAO Pengjun,GAO Song,Liu Xinghui,LV Pin.Research on and Analysis of Semiconductor Luminescence Diode[J].Journal of Liaoning University(Natural Sciences Edition),2001,28(2):141-147. |
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| Authors: | SHEN Guifen YAO Pengjun GAO Song Liu Xinghui LV Pin |
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| Institution: | SHEN Guifen,YAO Pengjun,GAO Song,LIU Xinghui,LV Pin Department of Physics,Liaoning University,Shenyang 110036,China |
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| Abstract: | After a brief introduction to the excitation of semiconductor luminescence diode, the light-emitting machenisms of various new luminescence materials, including Ⅲ-Ⅴ and Ⅱ-Ⅴ semiconductor compounds and PS , the structures of different luminescence diodes, and their properties were discussed, and the application of semiconductor luminescence diode in modern science was presented. |
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| Keywords: | semiconductor luminescence diode radiative recombination electro luminescence |
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