| 多孔硅发光特性的研究 |
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| 引用本文： | 施洪涛 王家宾. 多孔硅发光特性的研究[J]. 南京大学学报(自然科学版), 1993, 29(4): 597-604 |
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| 作者姓名： | 施洪涛 王家宾 |
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| 作者单位： | 南京大学物理系，南京大学物理系，南京大学物理系，南京大学物理系 |
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| 摘 要： | 在以氢氟酸为基本组份的腐蚀液中,以单晶硅为阳极采用横向阳极氧化方法,制备了具有光致发光特性的多孔硅,系统地研究了多孔硅薄膜的光学性质;x光衍射分析表明样品具有良好的晶体质量;测量了样品的变波长激光喇曼光谱,光致发光峰值波长和半峰高宽度对电解液组份、电解电流密度及电解时间等量的依赖关系;利用二维量子尺寸效应对上述物理现象作了定性的解释.
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| 关 键 词： | 横向阳极氧化 多孔硅 光致发光 二维量子尺寸效应 |
STUDY ON LUMINESCENT CHARACTERISTICS OF POROUS SILICON |
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| Shi Hongtao Zheng Youdou Wang Yongbin Yuan Renkuan. STUDY ON LUMINESCENT CHARACTERISTICS OF POROUS SILICON[J]. Journal of Nanjing University: Nat Sci Ed, 1993, 29(4): 597-604 |
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| Authors: | Shi Hongtao Zheng Youdou Wang Yongbin Yuan Renkuan |
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| Affiliation: | Department of Physics |
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| Abstract: | Luminescent porous silicon (PS) samples are fabricated by laterally anodizing monocrystalline Si in HF-based electrolytes. The perfect crystalline quality of PS films is verified by X-ray diffraction (XRD) and Raman spectroscopy. Variable-wavelength Raman spectra are measured at room temperature showing a certain size distribution of the PS samples. Dependencies of the photoluminescent peak wavelength and full width at half maximum (FWHM) of the samples on components of electrolyte, current densities and etching time etc. are studied and summarized. Those phenomena are interpreted by the quantum size confinement model. |
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| Keywords: | porous silicon laterally anodizing photoluminescence quantum size confinement effects |
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