Blue photoluminescence from nanocrystalline porous silicon structure fabricated by high-current pulsed electron beam irradiation

N-type Si(111) wafers have been processed by high-current pulsed electron beam(HCPEB) treatment with an increasing number of irradiation(1, 10 and 20pulses). The results of this work show that a highly porous nanostructure was formed after irradiation. Moreover, the high-density Si nanocrystals(Si-ncs) about 3 nm were distributed on the surface of Si wafers and exhibited3.02 e V Photoluminescence(PL) emission in blue band.The PL intensity increases with the increase in the Si-ncs' density in accordance with the quantum confinement model, which can be ascribed to the different pulse time of HCPEB treatment. The possible formation mechanisms of micropores and Si-ncs are discussed.