Blue photoluminescence from nanocrystalline porous silicon structure fabricated by high-current pulsed electron beam irradiation |
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Authors: | Peng Lü Xiao-Tong Wang Sheng-Zhi Yang Yan Li Xiu-Li Hou Qing-Feng Guan |
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Affiliation: | 1. School of Materials Science and Engineering, Jiangsu University, Zhenjiang, 212013, China
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Abstract: | N-type Si(111) wafers have been processed by high-current pulsed electron beam(HCPEB) treatment with an increasing number of irradiation(1, 10 and 20pulses). The results of this work show that a highly porous nanostructure was formed after irradiation. Moreover, the high-density Si nanocrystals(Si-ncs) about 3 nm were distributed on the surface of Si wafers and exhibited3.02 e V Photoluminescence(PL) emission in blue band.The PL intensity increases with the increase in the Si-ncs' density in accordance with the quantum confinement model, which can be ascribed to the different pulse time of HCPEB treatment. The possible formation mechanisms of micropores and Si-ncs are discussed. |
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Keywords: | High-current pulsed electron beam Porous Si Si nanocrystals Photoluminescence |
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